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MMBT9013LT1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT9013LT1SEMTECH46350Yes

MMBT9013LT1** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **SEMTECH**.

The MMBT9013LT1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by SEMTECH. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 25V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA (max)
  • Power Dissipation (PD): 350mW (max)
  • DC Current Gain (hFE): 60 to 300 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 150MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Surface Mount)

Description:

The MMBT9013LT1 is a small-signal NPN transistor designed for general-purpose amplification and switching applications. It is suitable for low-power circuits and is commonly used in consumer electronics, audio amplifiers, and signal processing.

Features:

  • High current gain (hFE) range
  • Low saturation voltage
  • Fast switching speed
  • Compact SOT-23 package
  • RoHS compliant

This transistor is widely used in portable electronics, sensor interfaces, and other low-voltage applications.

(Note: Always refer to the latest datasheet for precise specifications.)

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