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IR3N02 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IR3N02SHARP300Yes

IR3N02** is a phototransistor manufactured by **SHARP**.

The IR3N02 is a phototransistor manufactured by SHARP. Below are its factual specifications, descriptions, and features:

Specifications:

  • Type: Phototransistor
  • Package: Through-hole (3-pin)
  • Wavelength Range: 940 nm (Infrared)
  • Collector-Emitter Voltage (VCEO): 30 V
  • Emitter-Collector Voltage (VECO): 5 V
  • Collector Current (IC): 20 mA
  • Power Dissipation (P): 100 mW
  • Operating Temperature Range: -25°C to +85°C
  • Storage Temperature Range: -30°C to +100°C

Descriptions:

  • Designed for infrared sensing applications.
  • Features high sensitivity to IR light at 940 nm.
  • Used in remote control systems, object detection, and optical switching.

Features:

  • Fast response time.
  • High reliability.
  • Low dark current.
  • Compatible with standard IR emitters.

This information is based on manufacturer datasheets and technical documentation.

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