Professional IC Distribution & Technical Solutions

The PQ15RW21J00H is a SHARP-manufactured MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications.

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 150V
• Continuous Drain Current (I_D): 15A
• Pulsed Drain Current (I_DM): 60A
• Power Dissipation (P_D): 30W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(ON)): 0.21Ω (max) @ V_GS = 10V
• Input Capacitance (C_iss): 600pF (typical)
• Output Capacitance (C_oss): 150pF (typical)
• Reverse Transfer Capacitance (C_rss): 50pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 30ns (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220F (isolated type)

Descriptions & Features:

• Low On-Resistance: Ensures minimal power loss and high efficiency.
• Fast Switching Speed: Suitable for high-frequency applications.
• Isolated Package (TO-220F): Provides electrical isolation between the MOSFET and heatsink.
• High Voltage Tolerance: Supports up to 150V drain-source voltage.
• Robust Thermal Performance: Designed for high-power dissipation.
• Applications: Used in power supplies, motor control, DC-DC converters, and other switching circuits.

This MOSFET is optimized for high-performance power management in industrial and consumer electronics.