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SI4542DY Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4542DYSI166Yes

SI4542DY is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor).

The SI4542DY is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Manufacturer: FAIRCHILD (now part of ON Semiconductor)
  • Part Number: SI4542DY
  • Type: Dual N-Channel MOSFET
  • Technology: TrenchFET®
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGSS): ±20V
  • Continuous Drain Current (ID): 6.3A per channel
  • Pulsed Drain Current (IDM): 25A per channel
  • Power Dissipation (PD): 2W per channel
  • On-Resistance (RDS(on)): 0.028Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Total Gate Charge (Qg): 16nC (typical)
  • Input Capacitance (Ciss): 1100pF (typical)
  • Output Capacitance (Coss): 400pF (typical)
  • Reverse Transfer Capacitance (Crss): 100pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOIC-8

Description:

The SI4542DY is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and load switching.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Optimized for high-frequency switching in power applications.
  • TrenchFET® technology for improved performance.
  • Dual N-Channel configuration in a single package.
  • Lead-free and RoHS compliant.

This information is based solely on the manufacturer's datasheet and technical documentation.

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