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SI3017-FS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI3017-FSSILICON1325Yes

SI3017-FS** is a high-performance, low-power RF transistor manufactured by **SILICON**.

The SI3017-FS is a high-performance, low-power RF transistor manufactured by SILICON. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: SILICON
  • Part Number: SI3017-FS
  • Type: RF Transistor
  • Technology: Silicon NPN
  • Frequency Range: Up to 3 GHz
  • Power Output: 1.5 W (typical)
  • Voltage Rating (Vce): 12 V
  • Current Rating (Ic): 150 mA
  • Gain (hFE): 10 dB (minimum at 900 MHz)
  • Package: SOT-89 (Surface Mount)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The SI3017-FS is a high-frequency RF transistor designed for amplification in wireless communication applications. It is optimized for low noise and high linearity, making it suitable for RF power amplifiers, driver stages, and general-purpose RF amplification in the UHF to L-band frequency range.

Features:

  • High Power Gain (10 dB min @ 900 MHz)
  • Low Noise Figure
  • High Linearity for Improved Signal Integrity
  • Robust SOT-89 Package for Surface Mount Applications
  • Wide Operating Temperature Range (-55°C to +150°C)
  • Suitable for Battery-Powered Devices (Low Power Consumption)

This transistor is commonly used in cellular, ISM band, and wireless data communication systems.

For detailed datasheet information, refer to the manufacturer's official documentation.

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