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2SC1123 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1123SONY1000Yes

2SC1123** is a silicon NPN transistor manufactured by **SONY**.

The 2SC1123 is a silicon NPN transistor manufactured by SONY. Below are its specifications, descriptions, and features:

Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 300mW
  • Transition Frequency (fT): 200MHz (typical)
  • Gain Bandwidth Product: High-frequency performance
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

The 2SC1123 is a general-purpose high-frequency NPN transistor designed for amplification and switching applications. It is commonly used in RF (radio frequency) circuits, audio amplifiers, and signal processing due to its high transition frequency and low noise characteristics.

Features:

  • High-frequency performance (suitable for RF applications)
  • Low noise (ideal for signal amplification)
  • Compact TO-92 package (easy to integrate into circuits)
  • Reliable silicon construction (stable operation under varying conditions)

This transistor is now considered obsolete, but it was widely used in vintage electronics and communication devices.

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