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SST39VF040-70-4I-NH Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SST39VF040-70-4I-NHSST1112Yes

SST39VF040-70-4I-NH** is a **4 Mbit (512K x 8) CMOS Multi-Purpose Flash (MPF)** memory device manufactured by **Silicon Storage Technology (SST)**.

The SST39VF040-70-4I-NH is a 4 Mbit (512K x 8) CMOS Multi-Purpose Flash (MPF) memory device manufactured by Silicon Storage Technology (SST).

Key Specifications:

  • Density: 4 Mbit (512K x 8)
  • Supply Voltage: 2.7V - 3.6V
  • Access Time: 70 ns
  • Operating Current: 15 mA (typical)
  • Standby Current: 5 µA (typical)
  • Sector-Erase Capability: Uniform 4 KByte sectors
  • Block-Erase Capability: 32 KByte or 64 KByte blocks
  • Chip-Erase Function: Supported
  • Endurance: 100,000 cycles (minimum)
  • Data Retention: >100 years
  • Package: 32-lead PLCC (Plastic Leaded Chip Carrier)
  • Operating Temperature: -40°C to +85°C (Industrial)

Features:

  • Single Voltage Read/Write Operation (2.7V - 3.6V)
  • SuperFlash® Technology for high performance and reliability
  • Low Power Consumption (active and standby modes)
  • Fast Sector/Block Erase & Byte Programming
  • Hardware & Software Data Protection
  • Compatible with JEDEC Standards
  • CMOS I/O Compatibility

This device is commonly used in embedded systems, industrial controls, networking, and telecommunications applications.

Would you like additional details on pin configuration or timing characteristics?

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