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IRFBC40 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFBC40ST100Yes

IRFBC40 is a power MOSFET manufactured by STMicroelectronics.

The IRFBC40 is a power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on the Manufactor Datasheet:

Specifications:

  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 6.2A (at 25°C)
  • Pulsed Drain Current (IDM): 24A
  • Power Dissipation (PD): 150W (at 25°C)
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 1.5Ω (max) at VGS = 10V
  • Input Capacitance (Ciss): 600pF (typ)
  • Output Capacitance (Coss): 100pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 60ns (typ)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: TO-220AB

Description:

The IRFBC40 is a high-voltage N-channel MOSFET designed for switching applications. It features fast switching speeds, low gate charge, and high ruggedness, making it suitable for power supplies, motor control, and other high-voltage applications.

Features:

  • High Voltage Capability (600V)
  • Low On-Resistance (1.5Ω max)
  • Fast Switching Performance
  • Improved dv/dt Capability
  • Avalanche Energy Specified
  • TO-220 Package for Easy Mounting

For detailed electrical characteristics and application notes, refer to the official STMicroelectronics datasheet.

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