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SPP03N60C3 Manufacturer: STMicroelectronics

#### Specifications:

• Transistor Type: N-channel MOSFET
• Technology: Power MOSFET
• Drain-Source Voltage (V_DS): 600 V
• Continuous Drain Current (I_D): 3 A
• Pulsed Drain Current (I_DM): 12 A
• Power Dissipation (P_D): 38 W
• Gate-Source Voltage (V_GS): ±30 V
• On-Resistance (R_DS(on)): 2.5 Ω (max) at V_GS = 10 V
• Threshold Voltage (V_GS(th)): 3 V (min), 5 V (max)
• Input Capacitance (C_iss): 300 pF (typ)
• Output Capacitance (C_oss): 30 pF (typ)
• Reverse Transfer Capacitance (C_rss): 8 pF (typ)
• Turn-On Delay Time (t_d(on)): 10 ns (typ)
• Turn-Off Delay Time (t_d(off)): 50 ns (typ)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220

#### Descriptions:

The SPP03N60C3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage, high-speed switching applications. It features low gate charge, fast switching performance, and low on-resistance, making it suitable for power supplies, motor control, and lighting applications.

#### Features:

• High voltage capability (600 V)
• Low gate charge for improved switching efficiency
• Low on-resistance (R_DS(on))
• Fast switching speed
• Avalanche ruggedness
• TO-220 package for easy mounting and heat dissipation
• Suitable for high-efficiency power conversion

This MOSFET is commonly used in offline power supplies, inverters, and other high-voltage switching circuits.