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TBT200SD Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TBT200SDST410Yes

TBT200SD is a part manufactured by STMicroelectronics.

The TBT200SD is a part manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: STMicroelectronics
  • Part Number: TBT200SD
  • Type: Schottky Barrier Diode
  • Package: SOD-123
  • Maximum Reverse Voltage (VRRM): 20V
  • Average Forward Current (IF(AV)): 2A
  • Peak Forward Surge Current (IFSM): 30A
  • Forward Voltage Drop (VF): 0.38V (Typical at 1A)
  • Reverse Leakage Current (IR): 0.5mA (Maximum at VR = 20V)
  • Operating Temperature Range: -65°C to +125°C

Descriptions:

The TBT200SD is a Schottky barrier diode designed for high-efficiency rectification in low-voltage, high-frequency applications. It features low forward voltage drop and fast switching characteristics, making it suitable for power supply circuits, DC-DC converters, and reverse polarity protection.

Features:

  • Low Forward Voltage Drop: Enhances power efficiency.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • High Surge Current Capability: Robust performance under transient conditions.
  • Compact SOD-123 Package: Space-saving design for PCB applications.
  • Low Reverse Leakage Current: Improves energy efficiency.

This information is based on STMicroelectronics' official datasheet for the TBT200SD. For detailed technical parameters, refer to the manufacturer's documentation.

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