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D4NK60Z Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
D4NK60ZST261Yes

D4NK60Z** is a **N-channel 600V, 4A MOSFET** manufactured by **STMicroelectronics (ST)**.

The D4NK60Z is a N-channel 600V, 4A MOSFET manufactured by STMicroelectronics (ST). Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 4A (at 25°C)
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 38W (at 25°C)
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 2.5Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min), 5V (max)
  • Input Capacitance (Ciss): 300pF (typ)
  • Operating Junction Temperature (TJ): -55°C to +150°C

Description:

The D4NK60Z is a high-voltage MOSFET designed for switching applications. It is part of ST’s MDmesh™ technology, which provides low conduction losses and high switching performance. The device is suitable for power supplies, lighting, motor control, and industrial applications.

Features:

  • Low gate charge for improved switching efficiency
  • Fast switching speed
  • Low on-resistance (RDS(on))
  • Avalanche ruggedness for reliability in harsh conditions
  • 100% avalanche-tested
  • TO-252 (DPAK) package for efficient thermal performance

This MOSFET is optimized for high-voltage, high-efficiency power conversion applications.

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