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BD434 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BD434ST476Yes

BD434 is a PNP bipolar junction transistor (BJT) manufactured by STMicroelectronics.

The BD434 is a PNP bipolar junction transistor (BJT) manufactured by STMicroelectronics. Below are its key specifications:

  • Type: PNP
  • Collector-Emitter Voltage (VCE): -32 V
  • Collector-Base Voltage (VCB): -32 V
  • Emitter-Base Voltage (VEB): -5 V
  • Collector Current (IC): -4 A
  • Total Power Dissipation (Ptot): 36 W
  • DC Current Gain (hFE): 15 to 75 (at IC = -2 A, VCE = -4 V)
  • Transition Frequency (fT): 3 MHz
  • Operating Junction Temperature (Tj): -65°C to +150°C
  • Package: TO-126

These specifications are based on STMicroelectronics' datasheet for the BD434 transistor.

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