Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > ST04 > P4NC60

P4NC60 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P4NC60ST288Yes

P4NC60** is a power MOSFET manufactured by **STMicroelectronics (ST)**.

The P4NC60 is a power MOSFET manufactured by STMicroelectronics (ST). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 2.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min) - 5V (max)
  • Input Capacitance (Ciss): 300pF (typ)
  • Output Capacitance (Coss): 50pF (typ)
  • Reverse Transfer Capacitance (Crss): 15pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Package: TO-220

Description:

The P4NC60 is a high-voltage N-Channel MOSFET designed for switching applications in power supplies, motor control, and other high-voltage circuits. It offers low gate charge and fast switching performance.

Features:

  • High Voltage Capability (600V)
  • Low On-Resistance (2.5Ω max @ 10V)
  • Fast Switching Speed
  • Improved dv/dt Capability
  • Avalanche Energy Specified
  • TO-220 Package for Easy Mounting

This MOSFET is suitable for applications requiring efficient power handling and high-voltage switching.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • STM32F030F4P6TR ,3000,TSSOP-20年份：21+

    ### **Manufacturer:** STMicroelectronics ### **Part Number:** STM32F030F4P6TR ### **Specifications:** - **Core:** ARM Cortex-M0 - **Operating Frequency:** Up to 48 MHz - **Flash Memory:** 16 KB - **SRAM:** 4 KB - **Operating Voltage:** 2.

  • BD136 ,126,TO126

    BD136 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor (formerly part of STMicroelectronics).

  • STM32F429IGT6 ,120,LQFP176年份：22+

    ### **Manufacturer:** STMicroelectronics ### **Part Number:** STM32F429IGT6 ### **Specifications:** #### **Core:** - **ARM Cortex-M4** with FPU (Floating Point Unit) - **Clock Speed:** Up to 180 MHz - **Instruction Set:** Thumb-2 #### **

  • P83C380-DELL V2,PHI,21,DIP40

    XC95144XL-TQ144AWN,XILINX,21,TQFP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales