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P4NC60 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P4NC60ST288Yes

P4NC60** is a power MOSFET manufactured by **STMicroelectronics (ST)**.

The P4NC60 is a power MOSFET manufactured by STMicroelectronics (ST). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 2.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min) - 5V (max)
  • Input Capacitance (Ciss): 300pF (typ)
  • Output Capacitance (Coss): 50pF (typ)
  • Reverse Transfer Capacitance (Crss): 15pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Package: TO-220

Description:

The P4NC60 is a high-voltage N-Channel MOSFET designed for switching applications in power supplies, motor control, and other high-voltage circuits. It offers low gate charge and fast switching performance.

Features:

  • High Voltage Capability (600V)
  • Low On-Resistance (2.5Ω max @ 10V)
  • Fast Switching Speed
  • Improved dv/dt Capability
  • Avalanche Energy Specified
  • TO-220 Package for Easy Mounting

This MOSFET is suitable for applications requiring efficient power handling and high-voltage switching.

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