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TPN302 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPN302ST163Yes

TPN302** is a power MOSFET manufactured by **STMicroelectronics (ST)**.

The TPN302 is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual details about the part:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 50A
  • Pulsed Drain Current (IDM): 200A
  • Power Dissipation (PD): 125W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 2500pF (typ)
  • Output Capacitance (Coss): 600pF (typ)
  • Reverse Transfer Capacitance (Crss): 150pF (typ)
  • Package: TO-220
  • Operating Temperature Range: -55°C to +175°C

Descriptions:

The TPN302 is an N-channel power MOSFET designed for high-efficiency switching and power management applications. It features low on-resistance and high current handling capability, making it suitable for DC-DC converters, motor control, and power supply circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability
  • Fast switching performance
  • Avalanche ruggedness
  • Improved thermal performance due to TO-220 package

For exact datasheet details, refer to STMicroelectronics' official documentation.

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