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TCDT1110 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TCDT1110TFK120Yes

TCDT1110 is a phototransistor manufactured by TFK.

The TCDT1110 is a phototransistor manufactured by TFK. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Phototransistor
  • Package Type: Through-hole (THT)
  • Collector-Emitter Voltage (VCEO): 30V
  • Collector Current (IC): 20mA
  • Power Dissipation (Ptot): 100mW
  • Wavelength Range: Typically sensitive to visible and near-infrared light
  • Operating Temperature Range: -25°C to +85°C

Descriptions:

  • The TCDT1110 is a light-sensitive NPN phototransistor that converts light intensity into an electrical signal.
  • It is commonly used in optoelectronic applications such as light detection, encoders, and object sensing.

Features:

  • High sensitivity to light
  • Fast response time
  • Compact and easy to integrate into circuits
  • Reliable performance in varying light conditions

For exact performance characteristics, refer to the manufacturer’s datasheet.

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