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2SC3328-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3328-YTOS101Yes

2SC3328-Y** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SC3328-Y is a high-frequency NPN bipolar junction transistor (BJT) manufactured by Toshiba. Below are the factual specifications, descriptions, and features:

Manufacturer: Toshiba

Part Number: 2SC3328-Y

Transistor Type: NPN Bipolar Junction Transistor (BJT)

Key Specifications:

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 30V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 1.5GHz (typical)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • DC Current Gain (hFE): 40 to 200 (at VCE = 6V, IC = 5mA)

Package:

  • SOT-23 (Miniature Surface-Mount Package, 3-Pin)

Descriptions & Features:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Low noise figure, making it suitable for low-noise amplifiers (LNAs) in communication systems.
  • High transition frequency (fT) for high-speed switching and amplification in VHF/UHF bands.
  • Compact SOT-23 package, ideal for space-constrained PCB designs.
  • Commonly used in RF front-end circuits, wireless communication modules, and signal processing applications.

Applications:

  • RF amplifiers
  • Oscillators and mixers
  • Wireless communication devices (e.g., mobile phones, Wi-Fi modules)
  • Low-noise signal amplification

For exact performance characteristics, refer to the official Toshiba datasheet for the 2SC3328-Y.

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