The 2SC3328-Y is a high-frequency NPN bipolar junction transistor (BJT) manufactured by Toshiba. Below are the factual specifications, descriptions, and features:
Manufacturer: Toshiba
Part Number: 2SC3328-Y
Transistor Type: NPN Bipolar Junction Transistor (BJT)
Key Specifications:
- Collector-Base Voltage (VCBO): 50V
- Collector-Emitter Voltage (VCEO): 30V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Total Power Dissipation (PT): 150mW
- Transition Frequency (fT): 1.5GHz (typical)
- Noise Figure (NF): 1.5dB (typical at 1GHz)
- DC Current Gain (hFE): 40 to 200 (at VCE = 6V, IC = 5mA)
Package:
- SOT-23 (Miniature Surface-Mount Package, 3-Pin)
Descriptions & Features:
- Designed for high-frequency amplification in RF and microwave applications.
- Low noise figure, making it suitable for low-noise amplifiers (LNAs) in communication systems.
- High transition frequency (fT) for high-speed switching and amplification in VHF/UHF bands.
- Compact SOT-23 package, ideal for space-constrained PCB designs.
- Commonly used in RF front-end circuits, wireless communication modules, and signal processing applications.
Applications:
- RF amplifiers
- Oscillators and mixers
- Wireless communication devices (e.g., mobile phones, Wi-Fi modules)
- Low-noise signal amplification
For exact performance characteristics, refer to the official Toshiba datasheet for the 2SC3328-Y.