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TB1021P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TB1021PTOS100Yes

TB1021P** is a power transistor manufactured by **TOS (Toshiba)**.

The TB1021P is a power transistor manufactured by TOS (Toshiba). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: PNP Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Total Power Dissipation (PT): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-frequency power amplification and driver stages.
  • Encased in a TO-220 package for efficient heat dissipation.

Features:

  • High current capability (up to 3A).
  • Low saturation voltage for improved efficiency.
  • High reliability with robust construction.
  • Epitaxial planar structure for stable performance.

For exact application details, refer to the official Toshiba datasheet.

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