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TC511002AZ-80 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TC511002AZ-80TOS236Yes

TC511002AZ-80 is a high-speed 1Mbit (128K x 8) CMOS static RAM (SRAM) manufactured by Toshiba.

The TC511002AZ-80 is a high-speed 1Mbit (128K x 8) CMOS static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Organization: 128K words × 8 bits
  • Operating Voltage: 5V ±10%
  • Access Time: 80ns
  • Operating Current: 60mA (max)
  • Standby Current: 10μA (max) in CMOS standby mode
  • Package: 32-pin DIP (Dual In-line Package) or SOP (Small Outline Package)
  • Operating Temperature Range: 0°C to +70°C (commercial grade)

Descriptions:

  • The TC511002AZ-80 is a fully static RAM, meaning it does not require refresh cycles.
  • It features a common I/O structure for simplified interfacing.
  • Designed for high-speed applications with a fast access time of 80ns.
  • Low power consumption in standby mode makes it suitable for battery-backed applications.

Features:

  • High-Speed Operation: 80ns access time.
  • Low Power Consumption:
  • Active current: 60mA (max)
  • Standby current: 10μA (max) (CMOS level)
  • Fully Static Operation: No clock or refresh required.
  • Single 5V Power Supply: Compatible with standard TTL levels.
  • Three-State Outputs: Supports bus-oriented systems.
  • Data Retention Voltage: 2V (min) for battery backup applications.
  • Industry-Standard Pinout: Compatible with similar SRAM devices.

This SRAM is commonly used in embedded systems, industrial controls, telecommunications, and other applications requiring fast, low-power memory.

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