The TC511002AZ-80 is a high-speed 1Mbit (128K x 8) CMOS static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:
Specifications:
- Organization: 128K words × 8 bits
- Operating Voltage: 5V ±10%
- Access Time: 80ns
- Operating Current: 60mA (max)
- Standby Current: 10μA (max) in CMOS standby mode
- Package: 32-pin DIP (Dual In-line Package) or SOP (Small Outline Package)
- Operating Temperature Range: 0°C to +70°C (commercial grade)
Descriptions:
- The TC511002AZ-80 is a fully static RAM, meaning it does not require refresh cycles.
- It features a common I/O structure for simplified interfacing.
- Designed for high-speed applications with a fast access time of 80ns.
- Low power consumption in standby mode makes it suitable for battery-backed applications.
Features:
- High-Speed Operation: 80ns access time.
- Low Power Consumption:
- Active current: 60mA (max)
- Standby current: 10μA (max) (CMOS level)
- Fully Static Operation: No clock or refresh required.
- Single 5V Power Supply: Compatible with standard TTL levels.
- Three-State Outputs: Supports bus-oriented systems.
- Data Retention Voltage: 2V (min) for battery backup applications.
- Industry-Standard Pinout: Compatible with similar SRAM devices.
This SRAM is commonly used in embedded systems, industrial controls, telecommunications, and other applications requiring fast, low-power memory.