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2SC372 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC372TOS111Yes

2SC372** is a high-frequency NPN silicon transistor manufactured by **Toshiba**.

The 2SC372 is a high-frequency NPN silicon transistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Manufacturer: Toshiba (TOS)

Type: NPN Silicon Transistor

Category: High-Frequency Amplification

Key Specifications:

  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 200mW
  • Transition Frequency (fT): 600MHz (typical)
  • DC Current Gain (hFE): 40 ~ 200 (at IC = 1mA, VCE = 6V)
  • Operating Temperature Range: -55°C to +125°C

Package:

  • TO-92 (Plastic Encapsulation)

Features:

  • High transition frequency (fT) for RF and VHF applications
  • Low noise performance
  • Suitable for small-signal amplification in high-frequency circuits

Applications:

  • RF amplifiers
  • VHF/UHF circuits
  • Oscillators
  • General-purpose high-frequency amplification

This transistor is primarily used in communication and signal-processing circuits where high-frequency performance is critical.

Would you like additional details on pin configuration or equivalent alternatives?

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