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TPD1034F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPD1034FTOS158Yes

TPD1034F is a phototransistor manufactured by Toshiba.

The TPD1034F is a phototransistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Phototransistor
  • Package: Miniature Surface Mount Type (SMD)
  • Spectral Response Range: 400 nm to 1100 nm (Peak at 940 nm)
  • Collector-Emitter Voltage (VCEO): 30 V
  • Emitter-Collector Voltage (VECO): 5 V
  • Collector Current (IC): 20 mA
  • Power Dissipation (PD): 75 mW
  • Operating Temperature Range: -25°C to +85°C
  • Storage Temperature Range: -40°C to +100°C

Descriptions:

  • Designed for high-sensitivity infrared detection.
  • Suitable for applications requiring compact SMD packaging.
  • Features fast response time for optical sensing.

Features:

  • High Sensitivity: Optimized for infrared light detection.
  • Low Dark Current: Ensures reliable performance in low-light conditions.
  • Compact SMD Package: Ideal for space-constrained designs.
  • RoHS Compliant: Environmentally friendly construction.

This phototransistor is commonly used in optical sensors, encoders, and remote control systems.

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