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2SD2012 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD2012TOSHIBA105Yes

2SD2012 is a silicon NPN epitaxial planar transistor manufactured by Toshiba.

The 2SD2012 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. Here are the key specifications:

  • Type: NPN
  • Material: Silicon
  • Package: TO-220F
  • Collector-Base Voltage (VCBO): 160V
  • Collector-Emitter Voltage (VCEO): 160V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to 150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = 5V)
  • Transition Frequency (fT): 20MHz (at IC = 1A, VCE = 10V, f = 100MHz)
  • Applications: General-purpose amplification and switching

These specifications are based on the datasheet provided by Toshiba for the 2SD2012 transistor.

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