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6608G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
6608GTOSHIBA100Yes

TOSHIBA 6608G** is a semiconductor device, specifically a **high-voltage switching transistor**.

The TOSHIBA 6608G is a semiconductor device, specifically a high-voltage switching transistor. Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Emitter Voltage (VCEO): 800V
  • Collector Current (IC): 8A
  • Power Dissipation (PC): 80W
  • DC Current Gain (hFE): 10 to 40 (at IC = 4A, VCE = 5V)
  • Turn-On Time (ton): 0.5μs (typical)
  • Turn-Off Time (toff): 1.5μs (typical)
  • Package Type: TO-3P (Plastic-molded)

Descriptions:

  • Designed for high-voltage switching applications such as power supplies, inverters, and motor control circuits.
  • Features low saturation voltage for improved efficiency.
  • Suitable for fast-switching operations due to its optimized structure.

Features:

  • High breakdown voltage (800V) for robust performance.
  • High current capability (8A) for power applications.
  • Fast switching speed for efficient operation.
  • Plastic-molded TO-3P package for durability and heat dissipation.

This transistor is commonly used in industrial and consumer electronics requiring high-voltage handling and switching efficiency.

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