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T3G30F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
T3G30FTOSHIBA260Yes

T3G30F** is a power MOSFET manufactured by **TOSHIBA**.

The T3G30F is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 6.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 1500pF (typ)
  • Package: TO-220F (Fully Molded)

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Low on-resistance for reduced conduction losses.
  • Fast switching performance.
  • Fully molded TO-220F package for improved thermal performance.

Features:

  • Low RDS(on): Minimizes power loss in switching applications.
  • High Current Capability: Supports up to 30A continuous drain current.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Improved Thermal Performance: Fully molded package enhances heat dissipation.
  • Wide Gate-Source Voltage Range: Operates efficiently with VGS up to ±20V.

This MOSFET is commonly used in power management, motor control, DC-DC converters, and other high-current switching applications.

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