Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA03 > 1SS389

1SS389 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS389TOSHIBA2878Yes

1SS389 is a high-speed switching diode manufactured by Toshiba.

The 1SS389 is a high-speed switching diode manufactured by Toshiba. Here are the key specifications:

  • Type: Silicon Epitaxial Planar Diode
  • Maximum Repetitive Peak Reverse Voltage (VRRM): 30 V
  • Maximum DC Reverse Voltage (VR): 30 V
  • Maximum Forward Voltage (VF): 1 V at 10 mA
  • Maximum Reverse Current (IR): 0.1 µA at 25 V
  • Maximum Total Capacitance (CT): 2 pF at 0 V, 1 MHz
  • Maximum Reverse Recovery Time (trr): 4 ns
  • Operating Temperature Range: -55°C to +125°C
  • Package: SOD-323 (Mini-Mold)

These specifications are typical for high-speed switching applications.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • TC9020-002P ,100,

    TC9020-002P** is a semiconductor component manufactured by **Toshiba**.

  • 2SA1358-O ,500,TO126

    2SA1358-O** is a PNP silicon epitaxial planar transistor manufactured by **Toshiba**.

  • 74LCX125FT(AJ) ,2500,2130+年份：TSSOP-14

    74LCX125FT(AJ)** is a quad bus buffer gate manufactured by **TOSHIBA**.

  • LA7836,SANYO,50,ZIP

    LM1876T,NS,50,ZIP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales