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2SA1244-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1244-YTOSHIBA1961Yes

2SA1244-Y** is a PNP silicon epitaxial planar transistor manufactured by **TOSHIBA**.

The 2SA1244-Y is a PNP silicon epitaxial planar transistor manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -120V
  • Collector-Emitter Voltage (VCEO): -120V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Collector Dissipation (PC): 1W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 400 (at VCE = -5V, IC = -0.1A)
  • Transition Frequency (fT): 80MHz (Typical)
  • Package: TO-92MOD

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-frequency and medium-power circuits.
  • Features high current gain and low saturation voltage.

Features:

  • High Voltage Capability: Supports up to -120V (VCEO).
  • High Current Gain (hFE): Ensures efficient signal amplification.
  • Low Saturation Voltage: Enhances switching performance.
  • Compact TO-92MOD Package: Suitable for space-constrained designs.

For detailed application notes, refer to TOSHIBA's official datasheet.

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