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2SA1587-GR,LF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1587-GR,LF(TTOSHIBA48000Yes

2SA1587-GR,LF(T)** is a PNP transistor manufactured by **TOSHIBA**.

The 2SA1587-GR,LF(T) is a PNP transistor manufactured by TOSHIBA.

Specifications:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: SOT-89 (Mini-Power)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = -0.1A, VCE = -5V)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • High current gain (hFE) with low saturation voltage.
  • Suitable for compact designs due to its SOT-89 package.

Features:

  • Low saturation voltage for efficient switching.
  • High-speed switching capability.
  • Compact SMD package for space-saving PCB designs.
  • Reliable performance in various electronic circuits.

This transistor is commonly used in audio amplifiers, power management circuits, and other low-voltage applications.

(Note: Always refer to the official Toshiba datasheet for precise details before implementation.)

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