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2SC2229-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2229-YTOSHIBA366Yes

2SC2229-Y** is a high-frequency NPN silicon transistor manufactured by **TOSHIBA**.

The 2SC2229-Y is a high-frequency NPN silicon transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): 160V
  • Collector-Emitter Voltage (VCEO): 160V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 50mA
  • Power Dissipation (PC): 300mW
  • Transition Frequency (fT): 600MHz
  • DC Current Gain (hFE): 40 to 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92 (Standard through-hole package)

Descriptions:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Suitable for low-noise, high-gain amplification circuits.
  • Commonly used in radio transmitters, receivers, and communication equipment.

Features:

  • High transition frequency (fT = 600MHz) for excellent high-frequency performance.
  • Low noise characteristics, making it ideal for sensitive signal amplification.
  • High voltage tolerance (VCBO = 160V) for robust operation in various circuits.
  • Compact TO-92 package, facilitating easy PCB mounting.

This transistor is optimized for RF and switching applications where high-speed performance and reliability are critical.

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