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2SC930 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC930TOSHIBA678Yes

2SC930 is a silicon NPN transistor manufactured by Toshiba.

The 2SC930 is a silicon NPN transistor manufactured by Toshiba. Here are the key specifications:

  • Type: NPN
  • Material: Silicon
  • Maximum Collector-Base Voltage (V_CB): 60V
  • Maximum Collector-Emitter Voltage (V_CE): 50V
  • Maximum Emitter-Base Voltage (V_EB): 5V
  • Maximum Collector Current (I_C): 0.7A
  • Maximum Power Dissipation (P_D): 0.8W
  • Transition Frequency (f_T): 120MHz
  • DC Current Gain (h_FE): 40 to 320
  • Operating Temperature Range: -55°C to +150°C

These specifications are typical for the 2SC930 transistor as provided by Toshiba.

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