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2SK1769 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SK1769TOSHIBA144Yes

part 2SK1769** is a **N-channel MOSFET** manufactured by **TOSHIBA**.

The part 2SK1769 is a N-channel MOSFET manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 30A (continuous)
  • Power Dissipation (PD): 100W
  • On-Resistance (RDS(on)): 0.025Ω (max) at VGS = 10V
  • Input Capacitance (Ciss): 1500pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Rise Time (tr): 30ns (typical)
  • Turn-Off Delay Time (td(off)): 50ns (typical)
  • Fall Time (tf): 20ns (typical)
  • Operating Junction Temperature (Tj): -55°C to +150°C

Description:

The 2SK1769 is a high-speed switching MOSFET designed for applications requiring low on-resistance and high current handling. It is commonly used in power supplies, motor control, and DC-DC converters due to its efficiency and fast switching characteristics.

Features:

  • Low on-resistance (RDS(on)) for reduced conduction losses
  • High-speed switching for improved efficiency
  • Low gate charge for faster drive capability
  • Avalanche energy specified for ruggedness in inductive load applications
  • Low thermal resistance for better heat dissipation

This MOSFET is packaged in a TO-220AB form factor, making it suitable for high-power applications.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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