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RN2405(TE85R) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RN2405(TE85R)TOSHIBA2743Yes

RN2405(TE85R)** is a silicon N-channel MOSFET manufactured by **TOSHIBA**.

The RN2405(TE85R) is a silicon N-channel MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 12A
  • Pulsed Drain Current (IDM): 48A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 40mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) to 2.5V (max)
  • Input Capacitance (Ciss): 1200pF (typ)
  • Output Capacitance (Coss): 400pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 30ns (typ)
  • Package: SOP-8 (Small Outline Package)

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Suitable for DC-DC converters, motor control, and load switching.
  • Low on-resistance ensures minimal power loss and improved thermal performance.

Features:

  • Low RDS(ON) for reduced conduction losses.
  • Fast switching speed for high-frequency applications.
  • Avalanche energy specified for ruggedness in inductive loads.
  • Lead-free and RoHS compliant.

This MOSFET is optimized for automotive, industrial, and consumer electronics applications requiring efficient power management.

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