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S337T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S337TTOSHIBA1500Yes

TOSHIBA S337T** is a semiconductor component, specifically a **MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)**.

The TOSHIBA S337T is a semiconductor component, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 50A (at 25°C)
  • Pulsed Drain Current (IDM): 200A
  • Power Dissipation (PD): 100W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 3.7mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min), 2.5V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Package Type: TO-220SIS (isolated tab)

Descriptions & Features:

  • High Current Handling: Capable of handling up to 50A continuous current, making it suitable for high-power applications.
  • Low On-Resistance: 3.7mΩ max RDS(ON) ensures efficient power switching with minimal losses.
  • Fast Switching Speed: Optimized for high-frequency switching applications.
  • Isolated Package (TO-220SIS): The insulated tab allows for easier thermal management without requiring an additional insulator.
  • Applications: Used in DC-DC converters, motor control, power supplies, and automotive systems.

This component is designed for high-efficiency power switching in industrial and consumer electronics. For exact performance characteristics, refer to the official TOSHIBA datasheet.

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