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SSM6L61NU,LF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SSM6L61NU,LF(TTOSHIBA3000Yes

SSM6L61NU,LF(T)** is a MOSFET device manufactured by **Toshiba**.

The SSM6L61NU,LF(T) is a MOSFET device manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Package: US6 (Ultra Small 6-pin package)
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 1.5A
  • Power Dissipation (PD): 1W
  • On-Resistance (RDS(ON)):
  • 300mΩ (max) @ VGS = 10V
  • 400mΩ (max) @ VGS = 4.5V
  • Gate-Source Voltage (VGS): ±20V
  • Threshold Voltage (VGS(th)): 1.0V (min), 2.5V (max)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for low-voltage, high-efficiency switching applications.
  • Suitable for power management in portable devices, battery protection circuits, and load switches.
  • Features low on-resistance for reduced conduction losses.

Features:

  • Low On-Resistance (RDS(ON)) for improved efficiency.
  • Compact US6 Package saves board space.
  • Fast Switching Speed for high-frequency applications.
  • Low Threshold Voltage (VGS(th)) enables operation with low-voltage control signals.
  • RoHS Compliant and lead-free (LF).

For detailed electrical characteristics and application notes, refer to the official Toshiba datasheet.

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