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TPD4122K Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPD4122KTOSHIBA425Yes

TPD4122K is a power MOSFET module manufactured by Toshiba.

The TPD4122K is a power MOSFET module manufactured by Toshiba. Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Manufacturer: Toshiba
  • Type: Power MOSFET Module
  • Configuration: Dual N-Channel
  • Drain-Source Voltage (VDSS): 500V
  • Continuous Drain Current (ID): 12A (per channel)
  • Pulsed Drain Current (IDM): 48A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.45Ω (typical)
  • Input Capacitance (Ciss): 1000pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220AB (isolated)

Descriptions:

  • The TPD4122K is a high-voltage, dual N-channel power MOSFET module designed for switching applications.
  • It is suitable for use in power supplies, motor control, and other high-voltage circuits.
  • The module features low on-resistance and fast switching characteristics.

Features:

  • High Voltage Capability: 500V VDSS rating.
  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Isolated Package: TO-220AB package with electrical isolation for improved thermal performance.
  • Dual N-Channel Configuration: Allows for bridge or half-bridge circuit designs.

For exact performance characteristics, refer to the official Toshiba datasheet.

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