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1SS357(TPH3,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS357(TPH3,F)TOSHIBA57000Yes

SS357(TPH3,F)** is a **phototransistor** manufactured by **Toshiba**.

The SS357(TPH3,F) is a phototransistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Phototransistor
  • Package: TPH3 (Surface Mount Type)
  • Collector-Emitter Voltage (VCEO): 30V (max)
  • Emitter-Collector Voltage (VECO): 5V (max)
  • Collector Current (IC): 20mA (max)
  • Power Dissipation (PC): 75mW (max)
  • Operating Temperature Range: -25°C to +85°C
  • Storage Temperature Range: -40°C to +100°C
  • Peak Wavelength (λp): 940nm (Infrared)
  • Dark Current (ICEO): 100nA (max) at VCE = 5V

Descriptions & Features:

  • High Sensitivity: Designed for infrared light detection with optimized spectral response.
  • Surface-Mount Package (TPH3): Compact and suitable for automated PCB assembly.
  • Fast Response Time: Suitable for applications requiring quick detection.
  • Low Dark Current: Ensures minimal leakage current in the absence of light.
  • Applications:
  • Optical encoders
  • Light barriers
  • Object detection
  • Remote control systems

This phototransistor is widely used in automation, consumer electronics, and industrial sensing due to its reliability and performance.

(Note: Always refer to the official Toshiba datasheet for detailed electrical characteristics and application guidelines.)

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