Professional IC Distribution & Technical Solutions

The 2SA1162-GR(TE85L,F) is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: PNP
• Collector-Base Voltage (VCBO): -50V
• Collector-Emitter Voltage (VCEO): -50V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -150mA
• Collector Dissipation (PC): 150mW
• Junction Temperature (Tj): 150°C
• Storage Temperature (Tstg): -55°C to +150°C
• DC Current Gain (hFE): 120 to 560 (at VCE = -6V, IC = -2mA)
• Transition Frequency (fT): 180MHz (Typical)
• Package: SOT-23 (Mini Mold)

Descriptions:

• Designed for general-purpose amplification and switching applications.
• Low noise and high-speed switching characteristics.
• Suitable for small-signal amplification in audio and RF circuits.

Features:

• High DC Current Gain (hFE) for improved signal amplification.
• Compact SOT-23 Package for space-saving PCB designs.
• Low Saturation Voltage for efficient switching performance.
• RoHS Compliant (lead-free and environmentally friendly).

This transistor is commonly used in consumer electronics, audio amplifiers, and low-power switching circuits. For detailed performance curves and application notes, refer to Toshiba’s official datasheet.