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2SA1162-GR(TE85L,F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1162-GR(TE85L,FTOSHIBA60000Yes

2SA1162-GR(TE85L,F)** is a PNP silicon epitaxial planar transistor manufactured by **Toshiba**.

The 2SA1162-GR(TE85L,F) is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -150mA
  • Collector Dissipation (PC): 150mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 560 (at VCE = -6V, IC = -2mA)
  • Transition Frequency (fT): 180MHz (Typical)
  • Package: SOT-23 (Mini Mold)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Low noise and high-speed switching characteristics.
  • Suitable for small-signal amplification in audio and RF circuits.

Features:

  • High DC Current Gain (hFE) for improved signal amplification.
  • Compact SOT-23 Package for space-saving PCB designs.
  • Low Saturation Voltage for efficient switching performance.
  • RoHS Compliant (lead-free and environmentally friendly).

This transistor is commonly used in consumer electronics, audio amplifiers, and low-power switching circuits. For detailed performance curves and application notes, refer to Toshiba’s official datasheet.

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