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2SA1213-Y(TE12L,ZC Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1213-Y(TE12L,ZCTOSHIBA17000Yes

### **Part Number: 2SA1213-Y(TE12L,ZC** **Manufacturer: TOSHIBA** #### **Specifications:** - **Transistor Type:** PNP - **Polarity:** PNP - **Maximum Collector-Base Voltage (Vcb):** -50V - **Maximum Collector-Emitter Voltage (Vce):** -50V -

Part Number: 2SA1213-Y(TE12L,ZC

Manufacturer: TOSHIBA

#### Specifications:

  • Transistor Type: PNP
  • Polarity: PNP
  • Maximum Collector-Base Voltage (Vcb): -50V
  • Maximum Collector-Emitter Voltage (Vce): -50V
  • Maximum Emitter-Base Voltage (Veb): -5V
  • Maximum Collector Current (Ic): -150mA
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE): 120 to 560 (at Vce = -6V, Ic = -2mA)
  • Transition Frequency (fT): 80MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C

#### Descriptions:

  • Package: SOT-23 (Miniature Surface Mount)
  • Mounting Type: Surface Mount
  • Lead-Free & RoHS Compliant: Yes

#### Features:

  • High current gain (hFE) with low saturation voltage.
  • Suitable for low-power amplification and switching applications.
  • Compact SOT-23 package for space-saving PCB designs.
  • Designed for general-purpose applications in consumer electronics.

This transistor is commonly used in signal amplification, switching circuits, and other low-power electronic applications.

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