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2SC2712-Y,LF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2712-Y,LF(TTOSHIBA84000Yes

2SC2712-Y,LF(T)** is a NPN silicon epitaxial planar transistor manufactured by **TOSHIBA**.

The 2SC2712-Y,LF(T) is a NPN silicon epitaxial planar transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Collector Dissipation (PC): 200mW
  • Junction Temperature (Tj): 125°C
  • DC Current Gain (hFE): 120 to 400 (at VCE = 6V, IC = 2mA)
  • Transition Frequency (fT): 150MHz (min)
  • Package: SOT-23 (Miniature Surface-Mount)

Descriptions:

  • Designed for high-frequency amplification in general-purpose applications.
  • Suitable for switching circuits and low-noise amplification.
  • Features low saturation voltage and high current gain.

Features:

  • High fT (Transition Frequency) for RF and switching applications.
  • Compact SOT-23 package for space-saving PCB designs.
  • Low noise performance for signal amplification.
  • Pb-free and RoHS compliant (LF suffix indicates lead-free).

This transistor is commonly used in audio amplifiers, RF circuits, and switching applications. For detailed performance curves and application notes, refer to the official TOSHIBA datasheet.

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