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2SC3112-A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3112-ATOSHIBA148Yes

TOSHIBA 2SC3112-A** is a high-frequency NPN bipolar junction transistor (BJT) designed for RF amplifier applications.

The TOSHIBA 2SC3112-A is a high-frequency NPN bipolar junction transistor (BJT) designed for RF amplifier applications. Below are its key specifications, descriptions, and features based on manufacturer data:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 3V
  • Maximum Collector Current (IC): 50mA
  • Total Power Dissipation (Ptot): 150mW
  • Junction Temperature (Tj): 125°C
  • Transition Frequency (fT): 5GHz (typ.)
  • Noise Figure (NF): 1.5dB (typ. at 1GHz)
  • Gain (hFE): 20–100 (at VCE = 6V, IC = 5mA)

Description:

The 2SC3112-A is optimized for high-frequency amplification in RF circuits, such as VHF/UHF applications, wireless communication systems, and low-noise amplifiers (LNAs). It features low noise and high gain, making it suitable for signal amplification in sensitive RF stages.

Features:

  • High Transition Frequency (fT): 5GHz ensures excellent high-frequency performance.
  • Low Noise Figure (NF): 1.5dB (typ.) at 1GHz for improved signal clarity.
  • Compact Package: Comes in a small SOT-323 (SC-70) surface-mount package for space-constrained designs.
  • High Current Gain (hFE): Provides efficient signal amplification.

This transistor is commonly used in RF front-end circuits, mobile communication devices, and other high-frequency applications.

(Note: Always refer to the official TOSHIBA datasheet for precise and updated specifications.)

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