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2SC3325-Y,LF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3325-Y,LF(TTOSHIBA6000Yes

2SC3325-Y,LF(T)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC3325-Y,LF(T) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 50V
  • Maximum Collector-Emitter Voltage (VCE): 50V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 100mA
  • Total Power Dissipation (Ptot): 200mW
  • Transition Frequency (fT): 6GHz (typical)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • DC Current Gain (hFE): 40 to 200
  • Operating Temperature Range: -55°C to +150°C

Package:

  • Package Type: SOT-323 (SC-70)

Descriptions:

  • Designed for high-frequency amplification in RF applications.
  • Suitable for low-noise amplification (LNA) in wireless communication systems.
  • Optimized for VHF/UHF and microwave frequency bands.

Features:

  • High transition frequency (fT) for RF applications.
  • Low noise figure (NF) for improved signal clarity.
  • Compact SOT-323 package for space-constrained designs.
  • High DC current gain (hFE) for efficient amplification.

This transistor is commonly used in RF amplifiers, oscillators, and wireless communication circuits.

(Data sourced from TOSHIBA's official specifications.)

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