Professional IC Distribution & Technical Solutions

The part 2SK3756(TE12L,F) is a power MOSFET manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Drain Current (I_D): 50A (continuous)
• Pulsed Drain Current (I_DM): 200A
• Power Dissipation (P_D): 100W
• On-Resistance (R_DS(on)): 8.5mΩ (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 1.0V to 2.5V
• Input Capacitance (C_iss): 3500pF (typ)
• Output Capacitance (C_oss): 700pF (typ)
• Reverse Transfer Capacitance (C_rss): 150pF (typ)
• Turn-On Delay Time (t_d(on)): 15ns (typ)
• Turn-Off Delay Time (t_d(off)): 50ns (typ)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220F (isolated type)

Descriptions:

• The 2SK3756(TE12L,F) is a high-performance N-channel power MOSFET designed for switching applications.
• It features low on-resistance and fast switching speeds, making it suitable for power supply circuits, motor control, and DC-DC converters.
• The TO-220F package provides electrical isolation between the device and the heatsink.

Features:

• Low On-Resistance: Minimizes conduction losses.
• High Current Capability: Supports up to 50A continuous current.
• Fast Switching Speed: Enhances efficiency in high-frequency applications.
• Isolated Package (TO-220F): Eliminates the need for an insulating sheet.
• Avalanche Energy Specified: Ensures robustness in rugged conditions.
• Low Gate Charge: Reduces drive power requirements.

This MOSFET is optimized for high-efficiency power conversion and control applications.