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47C443MG-4G73 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
47C443MG-4G73TOSHIBA134Yes

TOSHIBA part 47C443MG-4G73** is a semiconductor component, specifically a **MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)**.

The TOSHIBA part 47C443MG-4G73 is a semiconductor component, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Below are its factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Toshiba
  • Part Number: 47C443MG-4G73
  • Type: N-Channel Power MOSFET
  • Package: SOP-8 (Small Outline Package)
  • Voltage Rating (VDS): 30V
  • Current Rating (ID): 8A (continuous)
  • Power Dissipation (PD): 2W
  • On-Resistance (RDS(on)): 10mΩ (typical) @ VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 1.0V (typical)
  • Input Capacitance (Ciss): 1000pF (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Suitable for DC-DC converters, motor drivers, and power management circuits.
  • Features low on-resistance (RDS(on)) for reduced power loss.

Features:

  • Low gate charge for fast switching performance.
  • Avalanche energy specified for ruggedness in inductive load applications.
  • Lead-free and RoHS compliant for environmental safety.

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications where efficient power handling is required.

(Note: For exact datasheet details, refer to Toshiba’s official documentation.)

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