Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA04 > LTR367T

LTR367T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LTR367TTOSHIBA980Yes

TOSHIBA LTR367T** is a **Schottky Barrier Diode (SBD)** designed for high-efficiency rectification in various electronic circuits.

The TOSHIBA LTR367T is a Schottky Barrier Diode (SBD) designed for high-efficiency rectification in various electronic circuits. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Type: Schottky Barrier Diode (SBD)
  • Package: SOD-323 (Miniature Surface Mount)
  • Maximum Reverse Voltage (VR): 40V
  • Average Rectified Forward Current (IO): 0.5A
  • Peak Forward Surge Current (IFSM): 2A
  • Forward Voltage Drop (VF): 0.5V (Typical at 0.5A)
  • Reverse Leakage Current (IR): 10µA (Max at 40V)
  • Junction Temperature (TJ): -55°C to +125°C
  • Storage Temperature (TSTG): -55°C to +150°C

Descriptions:

  • Designed for high-speed switching applications.
  • Low forward voltage drop ensures high efficiency.
  • Suitable for surface-mount technology (SMT) due to its compact SOD-323 package.
  • Ideal for power rectification, DC-DC converters, and reverse polarity protection.

Features:

  • Low Power Loss: Schottky barrier structure minimizes energy dissipation.
  • Fast Switching: Optimized for high-frequency applications.
  • Compact Size: SOD-323 package saves PCB space.
  • High Reliability: Robust construction for stable performance.

This diode is commonly used in portable electronics, power supplies, and automotive circuits where efficiency and space-saving are critical.

(Note: Always refer to the official TOSHIBA datasheet for precise technical details before implementation.)

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • SSM3K333R,LF(T ,120000,SOT-23F年份：21+

    ### **SSM3K333R,LF(T) – TOSHIBA Manufacturer Specifications** #### **Description** The **SSM3K333R,LF(T)** is a **P-channel MOSFET** manufactured by **TOSHIBA**.

  • 2SA1298-Y(TE85L,F) ,3000,2208+年份：SOT-23

    2SA1298-Y(TE85L,F)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

  • HN1B04FU-Y(TE85L,F ,3000,2138+年份：SOT363

    Manufacturer:** TOSHIBA **Part Number:** HN1B04FU-Y(TE85L,F) ### **Specifications:** - **Type:** Dual N-Channel MOSFET - **Configuration:** Common Drain - **Voltage Rating (VDS):** 20V - **Current Rating (ID):** 6A (per channel) - **On-R

  • PIC16C622A-04I/SO,MICROCH,35,SOP

    CD4053B,TI,35,SOP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales