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RN2903,LXGF(CT Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
RN2903,LXGF(CTTOSHIBA24000Yes

Part Number:** RN2903,LXGF **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** High-voltage switching transistor - **Application:** Designed for switching and amplification in high-voltage circuits - **Material:** Silicon (Si) - *

Part Number: RN2903,LXGF

Manufacturer: TOSHIBA

Specifications:

  • Type: High-voltage switching transistor
  • Application: Designed for switching and amplification in high-voltage circuits
  • Material: Silicon (Si)
  • Package: TO-220F (isolated type)
  • Polarity: NPN

Electrical Characteristics:

  • Collector-Base Voltage (VCBO): 900V
  • Collector-Emitter Voltage (VCEO): 800V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 3A
  • Total Power Dissipation (PT): 40W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C

Features:

  • High breakdown voltage (800V VCEO)
  • Low saturation voltage (VCE(sat))
  • Fast switching speed
  • Isolated TO-220F package for improved thermal performance
  • Suitable for power supply and inverter applications

Applications:

  • Switching power supplies
  • Inverters
  • Motor control circuits
  • High-voltage amplification

For exact performance curves and detailed test conditions, refer to the official TOSHIBA datasheet.

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