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SSM6N35FE,LXGM(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SSM6N35FE,LXGM(TTOSHIBA12000Yes

SSM6N35FE,LXGM(T)** is a **N-channel MOSFET** manufactured by **Toshiba**.

The SSM6N35FE,LXGM(T) is a N-channel MOSFET manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current (ID): 4.5A (continuous)
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 35mΩ (max at VGS = 10V)
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 800pF (typical)
  • Output Capacitance (Coss): 180pF (typical)
  • Reverse Transfer Capacitance (Crss): 50pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-563 (Mini6)

Descriptions:

  • Designed for low-voltage, high-efficiency switching applications.
  • Suitable for power management in portable devices, DC-DC converters, and load switches.
  • Features low on-resistance (RDS(on)) for reduced conduction losses.
  • Compact SOT-563 package for space-constrained PCB designs.

Features:

  • Low threshold voltage for compatibility with low-voltage drive circuits.
  • Fast switching performance for high-frequency applications.
  • Low power dissipation for improved thermal efficiency.
  • Lead-free and RoHS compliant.

This MOSFET is optimized for battery-powered devices, power switches, and motor control applications.

*(Data sourced from Toshiba’s official documentation.)*

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