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SSM6N61NU,LF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SSM6N61NU,LF(TTOSHIBA15000Yes

SSM6N61NU,LF(T)** is a MOSFET manufactured by **Toshiba**.

The SSM6N61NU,LF(T) is a MOSFET manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 6A
  • Power Dissipation (PD): 1.5W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 50mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Package: SOT-563 (Miniature Surface-Mount Package)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-efficiency switching applications in power management circuits.
  • Suitable for battery protection, load switches, and DC-DC converters.
  • Low on-resistance ensures minimal power loss.
  • Compact SOT-563 package enables space-saving PCB designs.

Features:

  • Low RDS(ON) for reduced conduction losses.
  • Fast switching performance for high-frequency applications.
  • High power density in a small footprint.
  • RoHS compliant and lead-free.

For detailed electrical characteristics and application notes, refer to Toshiba’s official datasheet.

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