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TK4A60DA(STA4,Q,M) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK4A60DA(STA4,Q,M)TOSHIBA5000Yes

TK4A60DA(STA4,Q,M)** is a power MOSFET manufactured by **TOSHIBA**.

The TK4A60DA(STA4,Q,M) is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 1.8Ω (max) @ VGS = 10V
  • Input Capacitance (Ciss): 300pF (typ)
  • Output Capacitance (Coss): 30pF (typ)
  • Reverse Transfer Capacitance (Crss): 10pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 55ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • Package Type: TO-252 (DPAK)

Descriptions:

  • A high-voltage N-Channel MOSFET designed for switching applications.
  • Suitable for power supply circuits, motor control, and other high-voltage switching applications.

Features:

  • Low On-Resistance: Ensures efficient power handling.
  • Fast Switching Speed: Optimized for high-frequency applications.
  • High Voltage Rating: Supports up to 600V for robust performance.
  • Low Gate Charge: Reduces switching losses.
  • Avalanche Energy Specified: Enhances reliability in rugged conditions.

This MOSFET is commonly used in power conversion, inverters, and industrial applications.

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