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TK8A60DA(STA4,X,S) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK8A60DA(STA4,X,S)TOSHIBA10000Yes

TK8A60DA(STA4,X,S)** is a power MOSFET manufactured by **TOSHIBA**.

The TK8A60DA(STA4,X,S) is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 0.6Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) - 4.0V (max)
  • Input Capacitance (Ciss): 750pF (typ)
  • Output Capacitance (Coss): 110pF (typ)
  • Reverse Transfer Capacitance (Crss): 25pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 50ns (typ)
  • Package: TO-220F (isolated type)

Descriptions:

  • Designed for high-voltage switching applications such as power supplies, motor control, and inverters.
  • Features low on-resistance for improved efficiency.
  • Fast switching speed reduces power losses.
  • Isolated package (TO-220F) provides electrical isolation between the device and heatsink.

Features:

  • High voltage capability (600V)
  • Low gate charge for efficient switching
  • Avalanche energy specified for reliability
  • Lead-free and RoHS compliant

For detailed datasheet information, refer to TOSHIBA's official documentation.

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