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TPC6110 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPC6110TOSHIBA100Yes

TPC6110 is a power MOSFET manufactured by Toshiba.

The TPC6110 is a power MOSFET manufactured by Toshiba. Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Manufacturer: Toshiba
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • Drain-Source On-Resistance (RDS(on)): 30mΩ (max) at VGS = 10V
  • Input Capacitance (Ciss): 1800pF (typ)
  • Output Capacitance (Coss): 500pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The TPC6110 is a high-performance N-channel power MOSFET designed for switching applications. It offers low on-resistance and fast switching speeds, making it suitable for power management in various electronic circuits.

Features:

  • Low on-resistance (RDS(on)) for reduced conduction losses
  • Fast switching performance
  • High current handling capability
  • Robust and reliable construction
  • Suitable for power supply, motor control, and DC-DC converter applications

For detailed datasheet information, refer to Toshiba's official documentation.

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