Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA05 > 1SS181,LF(T

1SS181,LF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS181,LF(TTOSHIBA174000Yes

Part Number:** SS181,LF(T) **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** Schottky Barrier Diode - **Configuration:** Single diode - **Maximum Repetitive Peak Reverse Voltage (VRRM):** 80V - **Maximum Average Forward Current

Part Number: SS181,LF(T)

Manufacturer: TOSHIBA

Specifications:

  • Type: Schottky Barrier Diode
  • Configuration: Single diode
  • Maximum Repetitive Peak Reverse Voltage (VRRM): 80V
  • Maximum Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Forward Voltage Drop (VF): 0.55V (typical) at 1A
  • Reverse Leakage Current (IR): 100µA (max) at 80V
  • Operating Junction Temperature (TJ): -55°C to +125°C
  • Storage Temperature Range (TSTG): -55°C to +150°C

Descriptions:

  • Package: SOD-123FL (small surface-mount package)
  • Material: Silicon Schottky barrier structure
  • RoHS Compliance: Yes

Features:

  • Low Forward Voltage Drop: Ensures high efficiency in power applications.
  • Fast Switching: Suitable for high-frequency rectification.
  • High Surge Current Capability: Robust performance under transient conditions.
  • Compact Size: Ideal for space-constrained PCB designs.
  • Lead-Free & Halogen-Free: Compliant with environmental regulations.

(Note: Always verify datasheet details for exact application conditions.)

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • TBD62783AFWG(Z,EHZ ,3808,SOP-18年份：21+

    TBD62783AFWG(Z,EHZ)** is a high-voltage, high-current Darlington transistor array manufactured by **Toshiba**.

  • TC58257AP-20 ,290,DIP28

    TC58257AP-20** is a 256K-bit (32K x 8) static RAM (SRAM) manufactured by **Toshiba**.

  • TC7S08FU(TE85L,F) ,75000,SOT-353年份：22+

    TC7S08FU(TE85L,F)** is a logic gate IC manufactured by **TOSHIBA**.

  • TC35095AP,TOSHIBA,94,DIP

    M51386L,MIT,94,SIP8

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales