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1SS302A,LXGF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS302A,LXGF(TTOSHIBA39000Yes

SS302A,LXGF(T)** is a semiconductor device manufactured by **TOSHIBA**.

The SS302A,LXGF(T) is a semiconductor device manufactured by TOSHIBA. Below are its key specifications, descriptions, and features based on available data:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: SS302A,LXGF(T)
  • Type: Schottky Barrier Diode (SBD)
  • Package: Surface-mount (SMD)
  • Maximum Reverse Voltage (VR): 30V
  • Average Rectified Forward Current (IO): 3A
  • Peak Forward Surge Current (IFSM): 80A (pulse width = 1ms)
  • Forward Voltage (VF): 0.55V (at 3A)
  • Reverse Leakage Current (IR): 0.5mA (at 30V)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The SS302A,LXGF(T) is a Schottky Barrier Diode designed for high-efficiency rectification in power supply circuits.
  • It features low forward voltage drop and fast switching, making it suitable for high-frequency applications.
  • The surface-mount package ensures compact PCB integration.

Features:

  • Low Power Loss: Due to minimal forward voltage drop.
  • High-Speed Switching: Ideal for switching power supplies and DC-DC converters.
  • High Surge Current Capability: Withstands short-duration overloads.
  • RoHS Compliant: Meets environmental standards.

For exact application details, refer to TOSHIBA’s official datasheet.

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